Direct Observation of a-Si:H/a-Si1-xCx:H Multilayers and Their Electrical Properties
- 1 January 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (1A), L24-27
- https://doi.org/10.1143/jjap.27.l24
Abstract
Very clear transmission electron microscopy (TEM) patterns of ultrathin a-Si:H/a-Si1-x C x :H multilayers have been observed. TEM photographs show rapidly increasing interface roughness as the number of multilayers increases. The a-Si:H/a-Si1-x C x :H heterojunction interfaces are the main causes of this roughness. In addition, the dependence of the optical gap, activation energy, and conductivity on a-Si:H well later thickness is investigated. These results cannot be explained by the quantum effect alone.Keywords
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