Hot Electron Conduction in a-Si:H/a-Si0.2C0.8:H Super Structure
- 1 November 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (11A), L922
- https://doi.org/10.1143/jjap.25.l922
Abstract
A-Si:H/a-Si0.2C0.8:H super structures were fabricated by glow discharge method. The barrier layer using a-Si0.2C0.8:H was typically 40 Å thick. The thickness of the well layer consisting of doped n-type a-Si:H was changed from 17 Å to 100 Å. The construction of super structures was confirmed by X-ray diffraction. Generation of hot electrons using a newly devised super structure was verified experimentally for the first time.Keywords
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