Reply to ``Comments on `Luminescence from electron-irradiated silicon'''
- 1 October 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (10), 4655
- https://doi.org/10.1063/1.1663108
Abstract
Recent experimental and analytical results indicate that the 0.97‐eV luminescence from irradiated Si is characterized by monoclinic symmetry. The assignment of symmetry class for other luminescence peaks in this material is incomplete.Keywords
This publication has 4 references indexed in Scilit:
- Comments on ``Luminescence from electron-irradiated silicon''Journal of Applied Physics, 1974
- Recombination luminescence from electron-irradiated Li-diffused SiJournal of Applied Physics, 1973
- Temperature, stress, and annealing effects on the luminescence from electron-irradiated siliconJournal of Applied Physics, 1973
- Recombination luminescence in irradiated silicon-effects of uniaxial stress and temperature variations†Radiation Effects, 1971