Double doped low etch pit density InP with reduced optical absorption
- 1 June 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 62 (1), 198-202
- https://doi.org/10.1016/0022-0248(83)90025-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968
- Optical Properties of-Type InPPhysical Review B, 1958