Properties of metal-poly(p-phenylene) Schottky barriers
- 14 August 1993
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 26 (8), 1274-1277
- https://doi.org/10.1088/0022-3727/26/8/018
Abstract
Metal-poly (p-phenylene) Schottky barriers, in which the metal and semiconductor are separated by a thin interfacial film, exhibit nearly ideal diode behaviour in the dark. The current-voltage characteristics have been studied in the range 20-300 degrees C and the current transport properties in the barriers are found to be in agreement with the diffusion theory of metal-semiconductor rectification.Keywords
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