Single−crystal β−SiC films by reactive sputtering

Abstract

Single−crystal β−SiO films were deposited by reactive sputtering on α−SiC substrates at temperatures as low as 1150 °C at a growth rate of 3 Å/sec. Elemental Si was used for target material. The carbon was provided by introducing a hydrocarbon gas in the reaction chamber. Initial results indicate that the process is highly promising.