LOW-TEMPERATURE EPITAXY OF β-SiC BY REACTIVE DEPOSITION

Abstract

Formation of β‐SiC on SiC by the reactive evaporation or reactive sputtering of Si in C₂H₂ was investigated. Use of values of relative C₂H₂:Si impingement rate > 30 avoided unreacted Si in the films. Epitaxial films were obtained on β‐SiC and α‐SiC at temperatures as low as 1100 and 1150°C, respectively. The occurrence of epitaxial temperatures several hundred degrees lower than for deposition by chemical vapor deposition is discussed in terms of deposition rate. Junction properties were observed for n‐type β‐SiC deposits on p‐type SiC.