The effects of processing conditions on the out-diffusion of oxygen from Czochralski silicon
- 1 October 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (10), 5739-5743
- https://doi.org/10.1063/1.331796
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kineticsJournal of Applied Physics, 1982
- Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in siliconApplied Physics Letters, 1982
- Diffusivity of oxygen in silicon during steam oxidationApplied Physics Letters, 1982
- The influence of thermal point defects on the precipitation of oxygen in dislocation-free silicon crystalsApplied Physics Letters, 1981
- Secondary Defect Generation Suppression and Diffusivity Restraint in Heavily Phosphorus Implanted Silicon by HCI OxidationJapanese Journal of Applied Physics, 1979
- Correlation between the diffusion of borons atoms and the growth kinetics of oxidation-induced stacking faultsRevue de Physique Appliquée, 1978
- Intrinsic gettering by oxide precipitate induced dislocations in Czochralski SiApplied Physics Letters, 1977
- Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl OxidationJapanese Journal of Applied Physics, 1976
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973