Correlation between the diffusion of borons atoms and the growth kinetics of oxidation-induced stacking faults
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12), 797-801
- https://doi.org/10.1051/rphysap:019780013012079700
Abstract
The influence of a boron diffusion on the growth kinetics of oxidation-induced stacking faults is investigated in detail. Using a boron doped silox oxide as a diffusion source, the OSF length is studied as a function of drive-in time for an anneal at 1 150 °C in respectively an inert, an oxygen and a chlorine containing ambient (C33-oxidation). In these experiments, the molar ratio of diborane to silane is used as a parameter. For some experiments, a planar B2O3-diffusion source is used. To explain the different experimental results, the assumption of a fractional interstitialcy diffusion mechanism for the boron diffusion is used. For the experiments in a chlorine containing atmosphere, the chlorine reaction at the Si-SiO2 interface has to be taken into account. The obtained results are compared with the results reported in the literatureKeywords
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