Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A), L339
- https://doi.org/10.1143/jjap.23.l339
Abstract
The effects of whole ingot annealing on 1.49 eV photoluminescence (PL) properties at 4.2 K in undoped/low-Cr doped LEC-grown semi-insulating GaAs have been studied. It has been found that whole ingot annealing considerably increases the PL intensities with no significant degradation of semi-insulating properties. It has been also found that whole ingot annealing drastically reduces both the radial variation of PL intensity distribution and the difference of PL intensities between seed end and tail end.Keywords
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