The exodiffusion of hydrogen in dislocated crystalline silicon
- 16 July 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 84 (1), 149-156
- https://doi.org/10.1002/pssa.2210840118
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- On the Energy Spectrum of Dislocations in SiliconPhysica Status Solidi (a), 1982
- Hydrogen passivation of defects in deformed siliconPhysica Status Solidi (a), 1981
- Possible configurational model for hydrogen in amorphous Si:H. An exodiffusion studyPhysical Review B, 1981
- Investigation of the Dislocation Spin System in Silicon as Model of One‐Dimensional Spin ChainsPhysica Status Solidi (b), 1981
- Effects of partial evolution of H from a-Si:H on the infrared vibrational spectra and the photoluminescenceJournal of Non-Crystalline Solids, 1980
- Thermal stability and decomposition kinetics of amorphous hydrogenated filmsThin Solid Films, 1979
- Electron states associated with partial dislocations in siliconPhysica Status Solidi (b), 1979
- Plasma preparations of amorphous silicon filmsThin Solid Films, 1978
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperaturesPhysica, 1956