Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy

Abstract
AlAs/GaAs monolayer scale superlattices were grown by atmospheric pressure-MOCVD and the layer structure was observed with a transmission electron microscope (TEM). Clear stripes with high contrast in the TEM lattice image indicated ultra-abrupt hetero-interfaces. The TEM image and the transmission electron diffraction pattern of the superlattices showed that the hetero-interface was nearly free of island-like structure even in such a very short period superlattice as (AlAs)5-(GaAs)2.