Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A), L85
- https://doi.org/10.1143/jjap.24.l85
Abstract
AlAs/GaAs monolayer scale superlattices were grown by atmospheric pressure-MOCVD and the layer structure was observed with a transmission electron microscope (TEM). Clear stripes with high contrast in the TEM lattice image indicated ultra-abrupt hetero-interfaces. The TEM image and the transmission electron diffraction pattern of the superlattices showed that the hetero-interface was nearly free of island-like structure even in such a very short period superlattice as (AlAs)5-(GaAs)2.Keywords
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