Investigation of dislocations by backscattering spectrometry and transmission electron microscopy
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1-3), 615-617
- https://doi.org/10.1016/0029-554x(78)90938-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Dislocation networks in phosphorus-implanted siliconPhilosophical Magazine, 1977
- Influence of thermal history on the residual disorder in implanted siliconRadiation Effects, 1976
- The Lattice Misfit and Its Compensation in the Si‐Epitaxial Layer by Doping with Germanium and CarbonJournal of the Electrochemical Society, 1975
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- The computer simulation and classical interpretation of fast ion emission profiles near planesRadiation Effects, 1970
- Dechannelling Cylinder of DislocationsPhysica Status Solidi (b), 1968