Conductance fluctuations from the local alteration of a hopping path

Abstract

Conductance fluctuations are observed in a narrow Si MOSFET below threshold at low temperatures as the laterally confining potential well is shifted perpendicular to the current direction by application of a transverse voltage Delta V_p. A calculation is presented of the spatial shift as a function of Delta V_p which suggests that the physical origin is a gradual modification of the percolation path in both the energy and spatial coordinates.