Reach-through type planar InGaAs/InP avalanche photodiode fabricated by continuous vapor phase epitaxy
- 1 March 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 20 (3), 256-264
- https://doi.org/10.1109/jqe.1984.1072376
Abstract
No abstract availableKeywords
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