An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures
- 30 June 1999
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 43 (6), 1045-1049
- https://doi.org/10.1016/s0038-1101(99)00022-2
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Copper-based metallization for ULSI circuitsMicroelectronic Engineering, 1996
- Dielectric Degradation of Cu/ SiO2/Si Structure during Thermal AnnealingJournal of the Electrochemical Society, 1996
- Ternary amorphous metallic thin films as diffusion barriers for Cu metallizationApplied Surface Science, 1995
- Sputtering of tantalum-based diffusion barriers in metallization: effects of gas pressure and compositionApplied Surface Science, 1995
- Effect of Annealing of Titanium Nitride on the Diffusion Barrier Property in Cu MetallizationJournal of the Electrochemical Society, 1995
- Barriers Against Copper Diffusion into Silicon and Drift Through Silicon DioxideMRS Bulletin, 1994
- Copper Transport in Thermal SiO2Journal of the Electrochemical Society, 1993
- Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additionsJournal of Applied Physics, 1992
- Interactions of Cu with CoSi2, CrSi2 and TiSi2 with and without TiNx barrier layersJournal of Applied Physics, 1990
- Diffusion of Metals in Silicon DioxideJournal of the Electrochemical Society, 1986