Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems
- 1 January 1996
- journal article
- research article
- Published by Taylor & Francis in Critical Reviews in Solid State and Materials Sciences
- Vol. 21 (3), 189-263
- https://doi.org/10.1080/10408439608241256
Abstract
When arsenides are grown by molecular beam epitaxy at low substrate temperatures, as much as 2% excess arsenic can be incorporated into the epilayer. This excess arsenic is in the form of antisites, but there is also a substantial concentration of gallium vacancies. With anneal, there is a significant decrease in the arsenic antisite and gallium vancancy concentrations as the excess arsenic precipitates. With further anneal, the arsenic precipitates coarsen. This combination of low substrate temperature molecular beam epitaxy and a subsequent anneal results in a broad spectrum of materials, from highly defected epilayers to a two-phase system of semimetallic arsenic precipitates in an arsenide semiconductor matrix. These materials exhibit some very interesting and useful electrical and optical properties.Keywords
This publication has 138 references indexed in Scilit:
- Optical scattering and absorption by metal nanoclusters in GaAsJournal of Applied Physics, 1994
- Electroabsorption in ultranarrow-barrier GaAs/AlGaAs multiple quantum well modulatorsApplied Physics Letters, 1994
- Annealing studies of low-temperature-grown GaAs:BeJournal of Applied Physics, 1992
- Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperaturesIEEE Journal of Quantum Electronics, 1992
- On compensation and conductivity models for molecular-beam-epitaxial GaAs grown at low temperatureJournal of Applied Physics, 1991
- MBE as a production technology for AlGaAs lasersJournal of Crystal Growth, 1991
- GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitatesJournal of Crystal Growth, 1991
- Femtosecond excitonic optoelectronicsIEEE Journal of Quantum Electronics, 1989
- Room-Temperature Optical Nonlinearities in GaAsPhysical Review Letters, 1986
- A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductorsZeitschrift für Physik B Condensed Matter, 1986