Recombination enhanced defect annealing in n-InP
- 1 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (5), 566-568
- https://doi.org/10.1063/1.95282
Abstract
The first example of a recombination enhanced defect reaction in InP is reported. The major defect E(0.79 eV) introduced by 1‐MeV electron irradiation of p+n junctions, formed by Zn‐doped epilayers on undoped n‐type substrates, is not observed with Schottky barrier structures on similar material. The defect exhibits a reduction in activation energy of recovery from 1.3 eV under pure thermal annealing to 0.42 eV with minority‐carrier (hole) injection. The enhanced reaction rate is proportional to the square of the injected current showing that the process results from two particle capture.Keywords
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