On the role of the dangling bond as a radiative centre in a-Si:H
- 31 January 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 41 (3), 263-267
- https://doi.org/10.1016/0038-1098(82)91046-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Recombination in: Defect luminescencePhysical Review B, 1980
- Theory of the resonant and non-resonant luminescence changes in amorphous siliconPhilosophical Magazine Part B, 1980
- The influence of spin defects on recombination and electronic transport in amorphous siliconPhilosophical Magazine Part B, 1980
- Light-induced E.S.R. in amorphous siliconJournal of Electronic Materials, 1979
- Optically detected electron spin resonance in amorphous siliconSolid State Communications, 1978
- Spin dependent luminescence in hydrogenated amorphous siliconPhilosophical Magazine Part B, 1978