Predictions of the rotational and vibrational spectra of SiF+, PO+, and NS+ by Mo/ller–Plesset perturbation theory
- 15 October 1988
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 89 (8), 4929-4944
- https://doi.org/10.1063/1.455636
Abstract
In order to predict accurately the spectroscopic constants of SiF+, PO+, and NS+, calculations at the MP4SDQ level have been carried out for the following series of 22 electron diatomics: AlF, SiF+, SiO, PO+, PN, NS+, CS, CCl+, and BCl. Two basis sets, one containing 66 contracted Gaussian‐type orbitals and the other with 93, have been employed for each of the nine molecules to calculate potential energy functions and spectroscopic constants. The a b i n i t i o r e and ω e values for the three ions whose high resolution spectra were not previously observed were corrected by reference to deviations between theory and experiment for the other six species, whose spectra were already well known. The dipole moments and electric field gradients of each species at the equilibrium bond distance were calculated at the CI‐SD level, and their dissociation energies were found to be predicted well by MP2 and very well by MP4SDTQ calculations. In order to understand better the differences between the spectral predictions of the two basis sets,r e and ω e of the well known first row analogs BF, CF+, CO, NO+, and N2 were computed at the MP4SDQ level with a series of five basis sets of increasing flexibility. Using the current prediction for SiF+ we have recently located its rotational spectrum, extensive measurements of which will be published separately.Keywords
This publication has 60 references indexed in Scilit:
- Absolute cross sections for electron-impact ionization and dissociative ionization of the SiF free radicalThe Journal of Chemical Physics, 1988
- An a b i n i t i o investigation of the spectroscopic properties of BCl, CS, CCl+, BF, CO, CF+, N2, CN−, and NO+The Journal of Chemical Physics, 1987
- Determination of the Born–Oppenheimer potential function of CCl+ by velocity modulation diode laser spectroscopyThe Journal of Chemical Physics, 1986
- Chemical bonding of polyatomic-ion implants in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Secondary Ion Analysis of Silicon under Ar+ Ion Etching in Chlorine and Fluorine FluxJapanese Journal of Applied Physics, 1983
- Theoretical studies on low-lying electronic states of the CCl+, SiCl+, and GeCl+ ionsThe Journal of Chemical Physics, 1983
- Gaseous ion reactions in SiF4 and SiF4–D2 mixturesJournal of Applied Physics, 1983
- F2 adsorption on Si observed with SIMS and QCMJournal of Vacuum Science and Technology, 1982
- Study of the ground state of PO+ using photoelectron spectroscopyJournal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1982
- Characterization of the ground ionic state of the NS molecule using photoelectron spectroscopyJournal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1977