Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy
- 10 November 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19), 1290-1292
- https://doi.org/10.1063/1.97389
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- An MBE route towards CdTe/InSb superlatticesJournal of Vacuum Science & Technology B, 1985
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- Growth of CdTe on InSb by organometallic vapor phase epitaxyApplied Physics Letters, 1984
- Microstructural studies of CdTe and InSb films grown by molecular beam epitaxyJournal of Applied Physics, 1984
- Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)Applied Physics Letters, 1981
- Optical properties of a donor-cadmium vacancy complex in CdTeSolid State Communications, 1974