Growth of CdTe on InSb by organometallic vapor phase epitaxy
- 15 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6), 678-680
- https://doi.org/10.1063/1.95354
Abstract
Organometallic vapor phase epitaxy of CdTe on InSb substrates is described in this letter. It is shown that high quality CdTe layers can be grown on InSb substrates by this process. Growths under various temperatures and reactant partial pressures are described. Growth under excess diethyltelluride pressure is shown to result in material with improved electrical and photoluminescence properties over that produced under excess dimethylcadmium pressure.Keywords
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