Heteroepitaxial InSb Films Grown by Molecular Beam Epitaxy
- 16 August 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 54 (2), 707-713
- https://doi.org/10.1002/pssa.2210540236
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Molecular Beam Epitaxy of InxGa1-xSb (0≦x≦1)Japanese Journal of Applied Physics, 1979
- Microzone Recrystallization of InSb Thin Films for Hall Effect Magnetic HeadsJapanese Journal of Applied Physics, 1978
- Molecular Beam Epitaxial Growth of InAsJapanese Journal of Applied Physics, 1977
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Electrical properties of InSb-based mixed crystal filmsJournal of Applied Physics, 1973
- Bulk-like InSb films by hot-wire zone crystallizationThin Solid Films, 1972
- Sheet Resistivity of the Epitaxially Grown Germanium LayerJapanese Journal of Applied Physics, 1968
- Galvanomagnetic properties of recrystallized dendritic InSb filmsSolid-State Electronics, 1966
- Effects of Dislocations on Mobilities in SemiconductorsPhysical Review B, 1952