Surface energetics and growth of pentacene
- 27 September 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (12), 121404
- https://doi.org/10.1103/physrevb.66.121404
Abstract
First-principles pseudopotential density-functional calculations for pentacene and anthracene are used to obtain atomic structures, cohesive energies, and surface energies for the low index surfaces. For pentacene, calculations predict that the (001) surface has a much lower surface energy than the other surfaces. From the first-principles results a general model of the intermolecular bonding is developed. This model may be employed to estimate the surface energies and cohesive energy for any polyacene crystal. Implications of the present results for understanding the temperature dependence of the growth morphology of pentacene are discussed.Keywords
This publication has 17 references indexed in Scilit:
- Hole transport in polycrystalline pentacene transistorsApplied Physics Letters, 2002
- Influence of the gate dielectric on the morphological and electronic structure of pentacene films for transistor applicationsPublished by SPIE-Intl Soc Optical Eng ,2001
- Growth dynamics of pentacene thin filmsNature, 2001
- High-performance bottom electrode organic thin-film transistorsIEEE Transactions on Electron Devices, 2001
- Universal Crossover from Band to Hopping Conduction in Molecular Organic SemiconductorsPhysical Review Letters, 2001
- Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO2 substratesSynthetic Metals, 1999
- Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate InsulatorsScience, 1999
- Temperature-independent transport in high-mobility pentacene transistorsApplied Physics Letters, 1998
- Molecular beam deposited thin films of pentacene for organic field effect transistor applicationsJournal of Applied Physics, 1996
- Simultaneous calculation of the equilibrium atomic structure and its electronic ground state using density-functional theoryComputer Physics Communications, 1994