The base current recombining at the oxidized silicon surface
- 1 May 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (5), 453-463
- https://doi.org/10.1016/0038-1101(83)90102-8
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- V-groove substrate fed logicElectronics Letters, 1978
- Characteristics of I2L at low current levelsIEEE Transactions on Electron Devices, 1977
- Base current of I/sup 2/L transistorsIEEE Journal of Solid-State Circuits, 1977
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- The gate-controlled diode s0 measurement and steady-state lateral current flow in deeply depleted MOS structuresSolid-State Electronics, 1974
- The injection model-a structure-oriented model for merged transistor logic (MTL)IEEE Journal of Solid-State Circuits, 1974
- Surface recombination in semiconductorsSurface Science, 1968
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952