Base current of I/sup 2/L transistors
- 1 April 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 12 (2), 143-150
- https://doi.org/10.1109/jssc.1977.1050863
Abstract
For the I/SUP 2/L n-p-n transistor, a method is presented which allows the base current to be split into various components. This has been achieved by comparing, at a fixed emitter-base voltage, the base current of I/SUP 2/L devices, different in geometry. Several precautions against parasitic effects are described. The measurements have been carried out in the emitter-base voltage range of 540-650 mV. Mathematical expressions are derived for the measured current densities and are compared with theory. It is demonstrated that bandgap narrowing effects in the heavily doped regions of the device have to be taken into account in order to explain the difference between experimental values and theory. Furthermore, it is shown that the experimentally determined base current of a four-collector I/SUP 2/L gate is in good agreement with the calculations.Keywords
This publication has 12 references indexed in Scilit:
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Some aspects of LEC transistor behaviourSolid-State Electronics, 1976
- Device physics of integrated injection logicIEEE Transactions on Electron Devices, 1975
- The injection model-a structure-oriented model for merged transistor logic (MTL)IEEE Journal of Solid-State Circuits, 1974
- Merged-transistor logic (MTL)-a low-cost bipolar logic conceptIEEE Journal of Solid-State Circuits, 1972
- An investigation of lateral transistors -d.c. characteristicsSolid-State Electronics, 1971
- Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1971
- Forward current—Voltage and switching characteristics of p+-n-n+(epitaxial) diodesIEEE Transactions on Electron Devices, 1969
- Minority carrier injection and charge storage in epitaxial Schottky barrier diodesSolid-State Electronics, 1965
- Minority carrier injection characteristics of the diffused emitter junctionIRE Transactions on Electron Devices, 1962