Epitaxial Growth of LiNbO3 Films on Sapphire Substrates by Excimer Laser Ablation Method and Their Surface Acoustic Wave Properties
- 1 May 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (5B), L745
- https://doi.org/10.1143/jjap.32.l745
Abstract
Epitaxial films of LiNbO3 have been formed on (001), (110) and (012) sapphire substrates using an excimer-laser ablation technique. The orientation relationships are LiNbO3(001)//sapphire(001), LiNbO3(001)//sapphire(110) and LiNbO3(100)//sapphire(012). LiNbO3(110) is also obtained on (110) sapphire under the fast-deposition condition. We have fabricated surface acoustic wave (SAW) filters on the LiNbO3 films and evaluated the properties.Keywords
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