Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
- 28 April 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (17), 1153-1155
- https://doi.org/10.1063/1.96454
Abstract
We have carried out an x-ray study of 20-well quaternary InGaAsP/InP and ternary InGaAs/InP structures grown on [100]InP by gas source molecular beam epitaxy (GSMBE). The multilayers were found to grow laterally coherent and very closely lattice matched in the [100] growth direction. The presence of well-defined higher order harmonics in the high-resolution x-ray diffraction confirms the excellent quality of InGaAs(P)/InP superlattices grown by the GSMBE technique.Keywords
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