Complex Dynamical Phenomena in Heavily Arsenic Doped Silicon
- 17 June 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 76 (25), 4753-4756
- https://doi.org/10.1103/physrevlett.76.4753
Abstract
Several complex dynamical phenomena have been observed in heavily doped Si, but a comprehensive account of the underlying atomic-scale processes is lacking. We report a wide array of first-principles calculations in terms of which we give such a comprehensive account. In particular, we find that vacancies , As pairs, complexes, and higher-order complexes play distinct roles in the observed dopant deactivation, reactivation, and anomalous diffusion. The latter is mediated by mobile complexes that form in “prepercolation” patches of a very high dopant concentrations and gives rise to fast As clustering at moderate temperatures. Our results are quantitative and in agreement with experimental numbers where available.
Keywords
This publication has 22 references indexed in Scilit:
- Vacancy generation resulting from electrical deactivation of arsenicApplied Physics Letters, 1995
- Perturbed angular correlation studies of dopant atom interactions in siliconJournal of Applied Physics, 1989
- Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect ComplexPhysical Review Letters, 1988
- Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser AnnealingJapanese Journal of Applied Physics, 1982
- Shallow junctions by high-dose As implants in Si: experiments and modelingJournal of Applied Physics, 1980
- The solid solubility and thermal behavior of metastable concentrations of As in SiApplied Physics Letters, 1980
- Stability study of laser irradiation of silicon diffused with arsenicApplied Physics Letters, 1980
- Solid solubility of As in Si as determined by ion implantation and cw laser annealingApplied Physics Letters, 1979
- Effect of complex formation on diffusion of arsenic in siliconJournal of Applied Physics, 1973
- Arsenic Clustering in SiliconJournal of Applied Physics, 1971