The effects of the annealing environment and of interposed layers on the growth kinetics of VSi2 thin films
- 1 August 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 45 (1), 123-124
- https://doi.org/10.1016/0040-6090(77)90212-7
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layerJournal of Applied Physics, 1976
- Kinetics of silicide formation by thin films of V on Si and SiO2 substratesJournal of Applied Physics, 1974
- Formation of vanadium silicides by the interactions of V with bare and oxidized Si wafersApplied Physics Letters, 1973