Magnetoresistance of Germanium-Silicon Alloys

Abstract

Magnetoresistance measurements of $n$-type germanium-silicon single crystals reveal a change in band structure occurring at about 14% silicon content. For silicon contents of less than 8%, the magnetoresistance is that of a crystal with ellipsoidal conduction minima along [111] axes in reciprocal lattice space. In the region 11-14% silicon, the magnetoresistance changes toward that expected for a crystal with ellipsoidal conduction minima along [100] axes. These results agree with Herman's speculations on the alloy band structure.