On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor
- 31 May 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (5), 577-582
- https://doi.org/10.1016/0038-1101(70)90138-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Different mechanisms affecting the inversion layer transient responseIEEE Transactions on Electron Devices, 1968
- Zu Relaxationseffekten bei epitaktischen Si-MOS-StrukturenPhysica Status Solidi (b), 1968
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967
- Minority carrier lifetime determination from inversion layer transient responseIEEE Transactions on Electron Devices, 1967
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966
- Measurements of the recombination velocity at germanium surfacesPhysica, 1954