Epitaxial Growth of Pb0.918Sn0.082Se Films on CaF2 and BaF2 Substrates
- 1 March 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (3), 1313-1316
- https://doi.org/10.1063/1.1661272
Abstract
Single‐crystal (111) Pb0.918Sn0.082Se films have been deposited on cleaved (111) BaF2 substrates by both the flash and the one‐boat evaporation methods. On cleaved (111) CaF2 substrates, single‐crystal (111) films were obtained only when one‐boat evaporation was used. At 87°K, mobilities up to 1.3×104 cm2/V sec have been obtained.Keywords
This publication has 11 references indexed in Scilit:
- Magnetic moment distribution in Fe0·8Cr0·2Journal of Physics and Chemistry of Solids, 1971
- Influence of band inversion upon the electrical properties of PbxSn1−xSe in the low carrier concentration rangeSolid State Communications, 1969
- Magnetic Field Dependence of Laser Emission inDiodesPhysical Review Letters, 1969
- TEMPERATURE AND COMPOSITIONAL DEPENDENCE OF LASER EMISSION IN Pb1−xSnxSeApplied Physics Letters, 1969
- Étude de la réaction à trois corps 11B(p, αα)α de 150 keV à 2 MeVJournal de Physique et le Radium, 1968
- Inversion of Conduction and Valence Bands inAlloysPhysical Review B, 1967
- DIODE LASERS OF Pb1−ySnySe AND Pb1−xSnxTeApplied Physics Letters, 1966
- Band Structure and Laser Action inPhysical Review Letters, 1966
- Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTePhysical Review B, 1965
- Preparation of Single-Crystal Films of PbSJournal of Applied Physics, 1964