The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe
- 2 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4), 471-476
- https://doi.org/10.1016/0022-0248(94)90852-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Molecular beam epitaxial growth and characterization of (100) HgSe on GaAsJournal of Crystal Growth, 1993
- Improved ohmic contacts for p-type ZnSe and related p-on-n diode structuresApplied Physics Letters, 1992
- Growth mechanisms of CdTe during molecular beam epitaxyJournal of Applied Physics, 1992
- Interdiffusion and Solid State Reactions in the Alloy ZnkHg1−kSelTe1−lPhysica Status Solidi (a), 1991
- Molecular‐beam epitaxy of CdxHg1−xTe at D.LETI/LIRJournal of Vacuum Science & Technology A, 1988
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- HgSe, a highly electronegative stable metallic contact for semiconductor devicesApplied Physics Letters, 1976
- Temperature-dependent electrical properties of HgSePhysical Review B, 1974
- Pressures of Hg and Selenium over HgSe(c) from Optical Density MeasurementsThe Journal of Chemical Physics, 1965
- Crystal Interfaces. Part II. Finite OvergrowthsJournal of Applied Physics, 1963