Motion of p-n junctions in CuInSe2

Abstract

We report the first p‐n junction delineation and diffusion study in a ternary chalcopyrite‐type semiconductor. p‐n junctions were formed in Zn‐ or Cd‐plated p‐CuInSe₂ by 5‐min anneals at 200–450 °C. By means of angle lapping and staining techniques, junction depths x_j varying from ∼1 μm to ∼130 μm were determined. These measurements yield the relationship lnx_j (μm) =14.31−6900/T (K). The interdiffusion coefficient derived from x_j is D (cm²/sec) =164 exp[−1.19 (eV)/kT]. The large preexponential term indicates concentrations or mobilities of point defects substantially above those of the related II‐VI compounds.