Preparation of Crystalline Germanium Films on Metals

Abstract

Two methods of obtaining Ge films on tungsten having single‐crystalline regions up to 1 mm large are described. One consists in melting a quasi‐amorphous Ge film prepared by thermal evaporation with a scanning‐electron beam. In a second procedure a tungsten sheet is pulled from a Ge melt. Films prepared by both methods were used to form p‐n junctions. The I‐V characteristic of a tunnel diode, made by using a Ge film on tungsten is shown. The Ge films on tungsten, after melting and solidifying, are different from thermally evaporated epitaxial Ge films. The latter contain a high concentration of defects which makes junction formation difficult.