Seed selection through ion channeling to produce uniformly oriented polycrystalline Si films on SiO2
- 1 November 1984
- journal article
- Published by Elsevier in Materials Letters
- Vol. 3 (1-2), 24-28
- https://doi.org/10.1016/0167-577x(84)90007-7
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Grain Growth Studies in Polysilicon by AR40 Ion Implantation and Thermal AnnealingJournal of the Electrochemical Society, 1984
- Mechanism for dynamic annealing during high flux ion irradiation in SiApplied Physics Letters, 1984
- Annealing behavior of thin polycrystalline silicon films damaged by silicon ion implantation in the critical amorphization rangeThin Solid Films, 1983
- Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantationApplied Physics Letters, 1982
- Zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si substratesApplied Physics Letters, 1982
- Subgrain boundaries in laterally seeded silicon-on-oxide formed by graphite strip heater recrystallizationApplied Physics Letters, 1982
- Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding ProcessJournal of the Electrochemical Society, 1981
- Low-temperature process to increase the grain size in polysilicon filmsElectronics Letters, 1981
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978