Mechanism for dynamic annealing during high flux ion irradiation in Si
- 15 April 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8), 758-760
- https://doi.org/10.1063/1.94907
Abstract
The results of high current density implantation of Si and As ions are presented. Significant lattice recovery during implantation is shown to occur as a result of ‘‘dynamic’’ or self-annealing processes. The mechanism for these processes will be discussed. Also, the morphology of the residual damage is shown to depend critically upon the mass of the implanted ion and the current density.Keywords
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