Impact of Polycrystalline Silicon Processing on Properties of MOS Memory Devices
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dopant Activation, Carrier Mobility, and TEM Studies in Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1990
- An Industrial LPCVD Process for In Situ Phosphorus‐Doped PolysiliconJournal of the Electrochemical Society, 1990
- On the silicon dioxide/polycrystalline silicon interface width measurementSurface and Interface Analysis, 1988
- Polycrystalline Silicon Oxidation Kinetics and Si / SiO2 Interface WidthJournal of the Electrochemical Society, 1986