Temperature dependent light induced changes and annealing of the changes in hydrogen amorphous silicon
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 429-432
- https://doi.org/10.1016/0022-3093(83)90612-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysApplied Physics Letters, 1983
- Effect of discharge conditions on characteristics of hydrogenated amorphous silicon deposited by DC glow discharge decompositionSolar Energy Materials, 1982
- Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Stability of n-i-p amorphous silicon solar cellsApplied Physics Letters, 1981
- Diffusion length of holes in a-Si:H by the surface photovoltage methodApplied Physics Letters, 1981
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977