A new physical model for the kink effect on InAlAs/InGaAs HEMTs
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 201-204
- https://doi.org/10.1109/iedm.1995.497214
Abstract
New measurements providing direct evidence linking the kink effect and impact ionization in InAlAs/InGaAs HEMTs are reported. Current kink models are not consistent with our findings. We propose a new mechanism, barrier-induced hole pile-up at the source, to explain the kink. The new model is shown to be consistent with both room temperature and low temperature measurements. These results allow formulation of a simple equivalent circuit model of the kink.Keywords
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