Highly Reliable Silicon Nitride Thin Films Made by Jet Vapor Deposition

Abstract

This paper reports our results on the properties of gate-quality silicon nitride thin films produced by the jet vapor deposition (JVD) technique at room temperature. It will be shown that the electrical properties and reliability of the metal-nitride-silicon (MNS) capacitors, in terms of their densities of interface traps, leakage current, and resistance against hot-carrier or radiation damage, are significantly better than similar devices made by any other deposited nitrides previously reported.