Electrical and Optical Properties of Sputtered n-p ZnO–Si Heterojunctions
- 1 December 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (12)
- https://doi.org/10.1143/jjap.10.1732
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Structures and electrical properties of zinc oxide films prepared by low pressure sputtering systemThin Solid Films, 1971
- Electronic conduction in amorphous semiconductors and the physics of the switching phenomenaJournal of Non-Crystalline Solids, 1970
- Electrical and Optical Properties of CdO-Si JunctionsJapanese Journal of Applied Physics, 1968
- Current/voltage characteristics of p-n Ge-Si and Ge-GaAs heterojunctionsProceedings of the Institution of Electrical Engineers, 1966