Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon
- 30 April 1994
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 3 (4-6), 382-387
- https://doi.org/10.1016/0925-9635(94)90189-9
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Epitaxial diamond thin films on (001) silicon substratesApplied Physics Letters, 1993
- Comparison of electronic transport in boron-doped homoepitaxial, polycrystalline, and natural single-crystal diamondApplied Physics Letters, 1993
- Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growthJournal of Materials Research, 1993
- Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor depositionApplied Physics Letters, 1993
- Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleationApplied Physics Letters, 1993
- Electrical conduction in homoepitaxial, boron-doped diamond filmsJournal of Physics: Condensed Matter, 1992
- Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobeApplied Physics Letters, 1990
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Impurity conduction in synthetic semiconducting diamondJournal of Physics C: Solid State Physics, 1970