Metal−Oxide−Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain
- 26 March 2010
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 114 (15), 7169-7172
- https://doi.org/10.1021/jp101083n
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Low-noise GaN ultraviolet p-i-n photodiodes on GaN substratesApplied Physics Letters, 2009
- Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin FilmsCrystal Growth & Design, 2008
- Mg x Zn 1 − x O -based photodetectors covering the whole solar-blind spectrum rangeApplied Physics Letters, 2008
- High-Sensitivity Mid-Ultraviolet Pt/Mg0.59Zn0.41O Schottky Photodiode on a ZnO Single Crystal SubstrateApplied Physics Express, 2008
- Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamondApplied Physics Letters, 2007
- Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrateApplied Physics Letters, 2007
- ZnO devices: Photodiodes and p-type field-effect transistorsApplied Physics Letters, 2005
- Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectorsApplied Physics Letters, 2003
- Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin filmsApplied Physics Letters, 2001
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996