ZnO devices: Photodiodes and p-type field-effect transistors

Abstract

The potential use of ZnO-based photonic and electronic devices has been demonstrated by the fabrication of prototype ultraviolet (UV) photodetector and field-effect transistor (FET) devices that contain films of $p$ -type ZnO with arsenic as the $p$ -type dopant. These $p$ -type films have high crystalline quality and show long-term stability. The ZnO UV photodetectors are based on $p\text{-}n$ junctions. The FETs are made with metal-semiconductor Schottky contacts on $p$ -type ZnO and are normally off (enhancement) devices. The spectral and electrical characteristics of these devices are presented and explained.