Highly confined two-dimensional electron gas in an In0.52AI0.48As/In0.52Ga0.47As modulation-doped structure with a strained InAs quantum well
- 1 May 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5), 745-748
- https://doi.org/10.1007/bf02666534
Abstract
No abstract availableKeywords
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