Fabrication of Thin-GaN LED Structures by Au–Si Wafer Bonding
Open Access
- 1 January 2006
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 9 (5), G171-G173
- https://doi.org/10.1149/1.2181293
Abstract
Using Au–Si wafer bonding and laser lift-off (LLO) techniques, an light emitting diode (LED) GaN epi layer was successfully transferred onto a Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sapphire substrate. The Raman spectra results show that the quality of the transferred GaN epi layer did not change; the initial compressive stress level of the GaN epi layer was relieved by after transferring. The transferred GaN epi layer was further processed for use in a thin-GaN LED device. The luminance-intensity-current voltage curve results indicate a forward voltage of , and a luminance intensity of 204 mcd at .Keywords
This publication has 16 references indexed in Scilit:
- Study of GaN light-emitting diodes fabricated by laser lift-off techniqueJournal of Applied Physics, 2004
- Freestanding GaN‐substrates and devicesphysica status solidi (c), 2003
- In x Ga 1−x N light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-offApplied Physics Letters, 2000
- Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bondSensors and Actuators A: Physical, 1997
- Current-voltage characteristics of strained piezoelectric structuresJournal of Applied Physics, 1995
- Assembling three-dimensional microstructures using gold-silicon eutectic bondingSensors and Actuators A: Physical, 1994
- Growth of group III nitrides on Si(111) by plasma-assisted molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) siliconApplied Physics Letters, 1991
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991