Low-temperature ion mixing of yttrium and silicon
- 1 February 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (3), 1288-1292
- https://doi.org/10.1063/1.345678
Abstract
Ion mixing of yttrium and amorphous silicon bilayers was measured as a function of fluence and temperature using 600-keV Xe++ ions between 80 and 498 K. At 80 K the mixing rate was in excellent agreement with a theoretical model based on thermal spike mixing. For temperatures up to ≊372 K, the temperature-dependent contributions accounted for less than 50% of the overall mixing rate. For mixing at or above 400 K, our results revealed the formation of an ion-beam-induced orthorhombic Y-Si phase, which is not normally formed during thermal anneals of such bilayers.Keywords
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