Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates
- 1 December 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (11), 1172-1174
- https://doi.org/10.1063/1.96316
Abstract
Photoluminescence (PL) experiments were carried out at 300 and 12 K to investigate the electro‐optical properties of Cd1−xZnxTe grown by molecular beam epitaxy on GaAs substrates. The compositional dependence of the band‐gap energy was determined. It has a quadratic dependence on x. The near band edge PL spectra at 12 K show free and bound exciton lines for x=0 and 1 and only broadened bound exciton peaks for other compositions. The bound exciton broadenings are quantitatively explained based on the compositional fluctuations of the cations. The PL line shapes give indications of the high quality of the layers.Keywords
This publication has 6 references indexed in Scilit:
- A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substratesApplied Physics Letters, 1985
- EXAFS of Cd1−xZnxTe: A test of the random distribution in zincblende ternary alloysSolid State Communications, 1985
- Photoluminescence of CdTe: A comparison of bulk and epitaxial materialJournal of Vacuum Science & Technology A, 1985
- Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substratesApplied Physics Letters, 1984
- Alloy broadening in photoluminescence spectra ofPhysical Review B, 1984
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970